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MII 200-12 A4
MID 200-12 A4
MDI 200-12 A4
Symbol
Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Dimensions in mm (1 mm = 0.0394")
min. typ. max.
V (BR)CES
V GE = 0 V
1200
V
V GE(th)
I C = 6 mA, V CE = V GE
4.5
6.5
V
I CES
I GES
V CE = V CES
V CE = 0 V, V GE = ± 20 V
T J = 25 ° C
T J = 125 ° C
15
10 mA
mA
± 700 nA
V CE(sat)
C ies
C oes
C res
t d(on)
t r
t d(off)
t f
E on
E off
I C = 150 A, V GE = 15 V
V CE = 25 V, V GE = 0 V, f = 1 MHz
Inductive load, T J = 125 ° C
I C = 150 A, V GE = ±15 V
V CE = 600 V, R G = 6.8 W
2.2
11
1.5
0.65
100
50
650
50
24.2
21
2.7
V
nF
nF
nF
ns
ns
ns
ns
mJ
mJ
R thJC
0.11 K/W
R thJS
with heatsink compound
0.22
K/W
Equivalent Circuits for Simulation
Reverse Diode (FRED)
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Conduction
V F
I F
I F = 150 A, V GE = 0 V,
I F = 150 A, V GE = 0 V, T J = 125 ° C
T C = 25 ° C
2.2
1.8
2.5
1.9
300
V
V
A
I RM
t rr
R thJC
R thJS
T C = 80 ° C
I F = 150 A, V GE = 0 V, -di F /dt = 1200 A/ m s
T J = 125 ° C, V R = 600 V
with heatsink compound
125
200
0.45
200 A
A
ns
0.23 K/W
K/W
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 1.5 V; R 0 = 7.0 m W
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.3 V; R 0 = 3.4 m W
Thermal Response
IGBT (typ.)
C th1 = 0.40 J/K; R th1 = 0.110 K/W
C th2 = 0.93 J/K; R th2 = 0.003 K/W
Free Wheeling Diode (typ.)
C th1 = 0.28 J/K; R th1 = 0.226 K/W
C th2 = 0.51 J/K; R th2 = 0.005 K/W
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2-4
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